Formation of perfect ohmic contact at indium tin oxide/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine interface using ReO3.
Identifieur interne : 000177 ( Main/Exploration ); précédent : 000176; suivant : 000178Formation of perfect ohmic contact at indium tin oxide/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine interface using ReO3.
Auteurs : RBID : pubmed:24469505Abstract
A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3 interfacial layers result in the same hole injection barrier, ≈0.4 eV, to NPB, indicating that the Fermi level is pinned to the NPB polaron energy level. However, a significant difference is observed in the generated charge density in the NPB layer near the interfacial layer/NPB interface, indicating that charge generation at the interface plays an important role in forming the ohmic contact.
DOI: 10.1038/srep03902
PubMed: 24469505
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Formation of perfect ohmic contact at indium tin oxide/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine interface using ReO3.</title><author><name sortKey="Yoo, Seung Jun" uniqKey="Yoo S">Seung-Jun Yoo</name><affiliation wicri:level="1"><nlm:affiliation>WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744</wicri:regionArea></affiliation></author><author><name sortKey="Chang, Jung Hung" uniqKey="Chang J">Jung-Hung Chang</name><affiliation wicri:level="1"><nlm:affiliation>Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan.</nlm:affiliation><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106</wicri:regionArea></affiliation></author><author><name sortKey="Lee, Jeong Hwan" uniqKey="Lee J">Jeong-Hwan Lee</name><affiliation wicri:level="1"><nlm:affiliation>WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744</wicri:regionArea></affiliation></author><author><name sortKey="Moon, Chang Ki" uniqKey="Moon C">Chang-Ki Moon</name><affiliation wicri:level="1"><nlm:affiliation>Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Materials Science and Engineering, Seoul National University, Seoul 151-744</wicri:regionArea></affiliation></author><author><name sortKey="Wu, Chih I" uniqKey="Wu C">Chih-I Wu</name><affiliation wicri:level="1"><nlm:affiliation>Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan.</nlm:affiliation><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106</wicri:regionArea></affiliation></author><author><name sortKey="Kim, Jang Joo" uniqKey="Kim J">Jang-Joo Kim</name><affiliation wicri:level="1"><nlm:affiliation>1] WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea [2] Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea.</nlm:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>1] WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea [2] Department of Materials Science and Engineering, Seoul National University, Seoul 151-744</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1038/srep03902</idno><idno type="RBID">pubmed:24469505</idno><idno type="pmid">24469505</idno><idno type="wicri:Area/Main/Corpus">000196</idno><idno type="wicri:Area/Main/Curation">000196</idno><idno type="wicri:Area/Main/Exploration">000177</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3 interfacial layers result in the same hole injection barrier, ≈0.4 eV, to NPB, indicating that the Fermi level is pinned to the NPB polaron energy level. However, a significant difference is observed in the generated charge density in the NPB layer near the interfacial layer/NPB interface, indicating that charge generation at the interface plays an important role in forming the ohmic contact.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24469505</PMID><DateCreated><Year>2014</Year><Month>01</Month><Day>28</Day></DateCreated><Article PubModel="Electronic"><Journal><ISSN IssnType="Electronic">2045-2322</ISSN><JournalIssue CitedMedium="Internet"><Volume>4</Volume><PubDate><Year>2014</Year></PubDate></JournalIssue><Title>Scientific reports</Title><ISOAbbreviation>Sci Rep</ISOAbbreviation></Journal><ArticleTitle>Formation of perfect ohmic contact at indium tin oxide/N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine interface using ReO3.</ArticleTitle><Pagination><MedlinePgn>3902</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1038/srep03902</ELocationID><Abstract><AbstractText>A perfect ohmic contact is formed at the interface of indium tin oxide (ITO) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) using ReO3 as the interfacial layer. The hole injection efficiency is close to 100% at the interface, which is much higher than those for interfacial layers of 1,4,5,8,9,11-hexaazatripheylene hexacarbonitrile (HAT-CN) and MoO3. Interestingly, the ReO3 and MoO3 interfacial layers result in the same hole injection barrier, ≈0.4 eV, to NPB, indicating that the Fermi level is pinned to the NPB polaron energy level. However, a significant difference is observed in the generated charge density in the NPB layer near the interfacial layer/NPB interface, indicating that charge generation at the interface plays an important role in forming the ohmic contact.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Yoo</LastName><ForeName>Seung-Jun</ForeName><Initials>SJ</Initials><Affiliation>WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Chang</LastName><ForeName>Jung-Hung</ForeName><Initials>JH</Initials><Affiliation>Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan.</Affiliation></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Jeong-Hwan</ForeName><Initials>JH</Initials><Affiliation>WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Moon</LastName><ForeName>Chang-Ki</ForeName><Initials>CK</Initials><Affiliation>Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea.</Affiliation></Author><Author ValidYN="Y"><LastName>Wu</LastName><ForeName>Chih-I</ForeName><Initials>CI</Initials><Affiliation>Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan.</Affiliation></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Jang-Joo</ForeName><Initials>JJ</Initials><Affiliation>1] WCU Hybrid Materials Program, Department of Materials Science and Engineering and the Center for Organic Light-Emitting Diodes, Seoul National University, Seoul 151-744, South Korea [2] Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea.</Affiliation></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>01</Month><Day>28</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Sci Rep</MedlineTA><NlmUniqueID>101563288</NlmUniqueID><ISSNLinking>2045-2322</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset><OtherID Source="NLM">PMC3904154</OtherID></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>10</Month><Day>09</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2013</Year><Month>12</Month><Day>27</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>1</Month><Day>29</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>1</Month><Day>29</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>1</Month><Day>29</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>epublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">srep03902</ArticleId><ArticleId IdType="doi">10.1038/srep03902</ArticleId><ArticleId IdType="pubmed">24469505</ArticleId><ArticleId IdType="pmc">PMC3904154</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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